| PART |
Description |
Maker |
| N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
| N08L163WC1CT1-55IL N08L163WC1C N08L163WC1CT1 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N08L163WC1C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| GS88118 GS88136 GS88118GT-11IT GS88118GT-11.5IT GS |
512K x 18, 256K x 36 ByteSafe?/a> 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe8Mb Sync Burst SRAMs
8Mb锛?12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M浣??512K x 18浣??ByteSafe??????RAM锛?甫2浣???插?????板?锛?
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100
512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100
8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位（256K x 36位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
8Mb12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位（512K x 18位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
|
GSI Technology, Inc.
|
| R1LV0816ASB-5SI R1LV0816ASB-7SI |
8Mb Advanced LPSRAM (512k word x 16bit)
|
Renesas Electronics Corporation
|
| MT58L512L18F MT58L256L32F MT58L256V32F MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| GS880F36AT-8.5 GS880F18AT-6.5I GS880F32AT-5.5I GS8 |
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 8.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 7 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 6 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS78132B-12I GS78132B GS78132B-10 GS78132B-10I GS7 |
8Mb56K x 32Bit）Asynchronous SRAM(8M位（256K x 32位）异步静态RAM) 8MB的（256 × 32位）异步SRAM00万位56K × 32位）异步静态RAM）的
256K x 32 8Mb Asynchronous SRAM
|
GSI Technology, Inc.
|
